收藏本站
December 200 4
FDC5612
60V N-Channel PowerTrench ? MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
Features
? 4.3 A, 60 V. R DS(ON) = 0.055 ? @ V GS = 10 V
R DS(ON) = 0.064 ? @ V GS = 6 V
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
?
?
?
?
Low gate charge (12.5nC typical).
Fast switching speed.
High performance trench technology for extremely
low R DS(ON) .
SuperSOT TM -6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D
S
1
6
D
G
2
5
D
D
SuperSOT TM -6
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
3
4
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
60
± 20
Units
V
V
I D
Drain Current
- Continuous
(Note 1a)
4.3
A
Drain Current
- Pulsed
20
P D
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
.562
Device
FDC5612
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
? 200 4 Fairchild Semiconductor Corporation
FDC5612 Rev. C 2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDC5614P_D87Z MOSFET P-CH 60V 3A 6SSOT
FDC5661N_F085 MOSFET N-CH 60V 6-SSOT
FDC602P_F095 MOSFET P-CH 20V 5.5A 6SSOT
FDC604P MOSFET P-CH 20V 5.5A SSOT-6
FDC606P MOSFET P-CH 12V 6A SSOT-6
FDC608PZ MOSFET P-CH 20V 5.8A SSOT-6
FDC610PZ MOSFET P-CH 30V 4.9A SSOT-6
FDC6301N IC FET DGTL N-CH DUAL 25V SSOT6
相关代理商/技术参数
FDC5612NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 60V 4.3A 6-Pin SuperSOT T/R
FDC5614 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V P-Channel Logic Level PowerTrench MOSFET
FDC5614P 功能描述:MOSFET SSOT-6 P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC5614P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SMD SSOT-6 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, P, SMD, SSOT-6
FDC5614P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR
FDC5614P_D87Z 功能描述:MOSFET 60V P-Ch Logic Lev PowerTrench MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC5614P-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC5614P Series 60 V 105 mOhms P-Channel Logic Level PowerTrench Mosfet - SSOT-6
FDC5661N 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: